cys t ech electronics corp. s pec. no. : c749e3 issued date : 2006.07.26 revised date : page no. : 1/3 ef10cxxe3 cy s t ek product s pecification 10amp. glass passivated efficien t fast recovery rectifiers ef10cxxe3 series features ? fast switching for high ef ficiency ? low forward voltage drop ? high current capability ? low reverse leakage current ? high sur g e current capability mechanical data ? case: molded plastic, t o -220ab ? t e rm inals: solderrable per mil-std-202 m e thod 208 ? epoxy : ul 94v -0 rate flam e retardant ? mounting position: any ? w e ight: 2.24 gram s maximum ratings and electrical characteristics ( rating at 25 c am bient tem perature unless otherwise sp ecified. single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%.) ty pe param e ter sy m bol ef 10c01 ef 10c02 ef 10c03 ef 10c05 ef 10c06 units maxim u m recurrent peak reverse voltage v rrm 50 100 200 400 600 v maxim u m rms voltage v rms 35 70 140 280 420 v maxim u m dc blocking voltage v dc 50 100 200 400 600 v maxim u m instantaneous forward voltage@ i f =5a v f 0.95 1.25 1.85 v maxim u m average forward rectified current @ t l =100 i (av) 10 a peak forward sur g e current @8.3m s single half sine wave superim posed on rated load (jedec m e thod) i fsm 100 a maxim u m dc reverse current v r =v rrm ,t j =25 v r =v rrm ,t j =125 i r 10 250 a diode junction capacitance @ f=1mhz and applied 4v reverse voltage c j 65 pf maxim u m reverse recovery tim e@ i f =0.5a, i r =1a, irr=0.25a trr 25 ns ty pical therm a l resistance, junction to lead r jc 2.2 /w storage tem p erature tstg -55 ~ +150 operating tem p erature t j -55 ~ +150 http://
cys t ech electronics corp. s pec. no. : c749e3 issued date : 2006.07.26 revised date : page no. : 2/3 ef10cxxe3 cy s t ek product s pecification characteristic curves
cys t ech electronics corp. s pec. no. : c749e3 issued date : 2006.07.26 revised date : page no. : 3/3 ef10cxxe3 cy s t ek product s pecification t o -220ab dimension inches millimeters inches millimeters dim min. max . min. max . dim min. max . min. max. a - 0.412 - 10.5 h 0.095 0.105 2.41 2.67 b 0.103 0.1 13 2.62 2.87 i 0.175 0.185 4.44 4.70 c 0.05 0.06 1.27 1.52 j 0.045 0.055 1.14 1.40 d 0.587 0.594 14.9 15.1 k 0.23 0.27 5.84 6.86 e 0.14 0.16 3.56 4.06 l 0.10 0.1 1 2.54 2.79 f 0.53 0.56 13.46 14.22 m 0.014 0.025 0.35 0.64 g 0.027 0.037 0.68 0.94 r 0.148 0.154 3.74 3.91 notes: 1.contr o lling dimension: millimeter s. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question w i th p a cking spec ification or p a cking method, please cont act y our local cy s t ek sales of fice. material: ? lead: 42 alloy ; solder plating ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in w hole or in part is prohibited w i thout the prior w r itten approval of cy stek. ? cy stek reserves the right to make changes to its products w i thout notice. ? cy stek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cy stek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . s t yle: pin 1.anode 2.cathode 3.anode 3-lead to-220ab plastic package cystek package code: e3 equivalent circuit :
|
